SI1032X-T1-GE3
| Part No | SI1032X-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 20V 200MA SC89-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
17851
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4558 | |
| 10 | 0.4467 | |
| 100 | 0.433 | |
| 1000 | 0.4193 | |
| 10000 | 0.4011 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 950 µm |
| Height | 800 µm |
| Length | 1.7 mm |
| Weight | 29.993795 mg |
| Fall Time | 25 ns |
| Lead Free | Lead Free |
| Packaging | Digi-Reel® |
| Rise Time | 25 ns |
| REACH SVHC | Unknown |
| Rds On Max | 5 Ω |
| Resistance | 5 Ω |
| Case/Package | SC |
| Number of Pins | 3 |
| Power Dissipation | 300 mW |
| Threshold Voltage | 700 mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 50 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50 ns |
| Element Configuration | Single |
| Max Power Dissipation | 300 mW |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 5 Ω |
| Gate to Source Voltage (Vgs) | 6 V |
| Continuous Drain Current (ID) | 200 mA |
| Drain to Source Voltage (Vdss) | 20 V |
