SI3424BDV-T1-E3
| Part No | SI3424BDV-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 8A 6TSOP |
| Datasheet | Download Datasheet |
| ECAD Module |
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Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Fall Time | 12 ns |
| Rise Time | 85 ns |
| REACH SVHC | Unknown |
| Rds On Max | 28 mΩ |
| Nominal Vgs | 3 V |
| Case/Package | TSOP |
| Number of Pins | 6 |
| Input Capacitance | 735 pF |
| Power Dissipation | 2.1 W |
| Threshold Voltage | 3 V |
| Number of Elements | 1 |
| Turn-On Delay Time | 18 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17 ns |
| Element Configuration | Single |
| Max Power Dissipation | 2.1 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 28 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 8 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
