SI3442BDV-T1-E3
| Part No | SI3442BDV-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 20V 3A 6-TSOP |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
17517
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6042 | |
| 10 | 0.5921 | |
| 100 | 0.574 | |
| 1000 | 0.5559 | |
| 10000 | 0.5317 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 1.65 mm |
| Height | 1 mm |
| Length | 3.05 mm |
| Weight | 19.986414 mg |
| Fall Time | 15 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 50 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 57 mΩ |
| Resistance | 57 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 1.8 V |
| Case/Package | TSOP |
| Number of Pins | 6 |
| Input Capacitance | 295 pF |
| Power Dissipation | 20 mW |
| Threshold Voltage | 1.8 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 35 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Single |
| Max Power Dissipation | 860 mW |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 90 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Continuous Drain Current (ID) | 3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drain to Source Breakdown Voltage | 20 V |
