SI4435DDY-T1-E3
| Part No | SI4435DDY-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 11.4A 8SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
19002
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8064 | |
| 10 | 0.7903 | |
| 100 | 0.7661 | |
| 1000 | 0.7419 | |
| 10000 | 0.7096 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.5 mm |
| Length | 5 mm |
| Weight | 186.993455 mg |
| Fall Time | 16 ns |
| Lead Free | Lead Free |
| Rise Time | 35 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 800 mΩ |
| Resistance | 24 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 260 pF |
| Power Dissipation | 2.5 W |
| Threshold Voltage | -3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 42 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40 ns |
| Element Configuration | Single |
| Max Power Dissipation | 2.5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 24 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 8.1 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drain to Source Breakdown Voltage | -30 V |
