SI7450DP-T1-E3
| Part No | SI7450DP-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 200V 3.2A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
28085
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.9574 | |
| 10 | 2.8983 | |
| 100 | 2.8095 | |
| 1000 | 2.7208 | |
| 10000 | 2.6025 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 5.89 mm |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Weight | 506.605978 mg |
| Fall Time | 25 ns |
| Lead Free | Lead Free |
| Rise Time | 20 ns |
| REACH SVHC | Unknown |
| Rds On Max | 80 mΩ |
| Resistance | 80 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 2 V |
| Current Rating | 5.3 A |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Power Dissipation | 1.9 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 14 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32 ns |
| Voltage Rating (DC) | 20 V |
| Element Configuration | Single |
| Max Power Dissipation | 5.2 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 80 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 3.2 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 200 V |
| Manufacturer Package Identifier | S17-0173_SINGLE |
| Drain to Source Breakdown Voltage | 200 V |
