SIR424DP-T1-GE3
| Part No | SIR424DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 20V 30A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
16440
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.846 | |
| 10 | 0.8291 | |
| 100 | 0.8037 | |
| 1000 | 0.7783 | |
| 10000 | 0.7445 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 5.89 mm |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Weight | 506.605978 mg |
| Fall Time | 10 ns |
| Lead Free | Lead Free |
| Rise Time | 12 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 5.5 mΩ |
| Resistance | 7.4 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Input Capacitance | 1.25 nF |
| Power Dissipation | 4.8 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 18 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23 ns |
| Max Power Dissipation | 41.7 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 4.6 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 30 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drain to Source Breakdown Voltage | 20 V |
