IXTH13N110
| Part No | IXTH13N110 |
|---|---|
| Manufacturer | IXYS |
| Description | MOSFET N-CH 1100V 13A TO247 |
| Datasheet | Download Datasheet |
| ECAD Module |
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Specifications
| Package | Tube |
|---|---|
| Series | MegaMOS™ |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1100 V |
| Current-ContinuousDrain(Id)@25°C | 13A (Tc) |
| DriveVoltage(MaxRdsOn | 10V |
| MinRdsOn) | 920mOhm @ 500mA, 10V |
| RdsOn(Max)@Id | 4.5V @ 250µA |
| Vgs | 195 nC @ 10 V |
| Vgs(th)(Max)@Id | ±20V |
| Vgs(Max) | 5650 pF @ 25 V |
| InputCapacitance(Ciss)(Max)@Vds | - |
| FETFeature | 360W (Tc) |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
| OperatingTemperature | Through Hole |
| MountingType | TO-247 (IXTH) |
| SupplierDevicePackage | TO-247-3 |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| Qualification |
