IPB180N06S4H1ATMA2
| Part No | IPB180N06S4H1ATMA2 |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 60V 180A TO263-7 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
19924
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.0804 | |
| 10 | 3.9988 | |
| 100 | 3.8764 | |
| 1000 | 3.754 | |
| 10000 | 3.5908 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 9.45 mm |
| Height | 4.57 mm |
| Length | 10.31 mm |
| Weight | 1.59999 g |
| Fall Time | 15 ns |
| Packaging | Tape & Reel |
| Rise Time | 5 ns |
| Rds On Max | 1.7 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | TO-263-7 |
| Number of Pins | 7 |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Package Quantity | 1000 |
| Input Capacitance | 21.9 nF |
| Power Dissipation | 250 W |
| Number of Channels | 1 |
| Turn-On Delay Time | 30 ns |
| On-State Resistance | 1.7 mΩ |
| Turn-Off Delay Time | 60 ns |
| Element Configuration | Single |
| Max Power Dissipation | 250 W |
| Max Dual Supply Voltage | 60 V |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 1.7 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 180 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain to Source Breakdown Voltage | 60 V |
