IRF630NS
| Part No | IRF630NS |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 200V 9.3A D2PAK |
| Datasheet | Download Datasheet |
| ECAD Module |
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Specifications
| Vgs(th) (Max) @ Id | 4V @ 250µA |
|---|---|
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | D2PAK |
| Series | HEXFET® |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 5.4A, 10V |
| Power Dissipation (Max) | 82W (Tc) |
| Packaging | Tube |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names | *IRF630NS |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 575pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Detailed Description | N-Channel 200V 9.3A (Tc) 82W (Tc) Surface Mount D2PAK |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
