
In Stock:
14204
Pricing
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Specifications
Package | Bulk |
---|---|
Series | HEXFET® |
ProductStatus | Active |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
DraintoSourceVoltage(Vdss) | 19A (Tc) |
Current-ContinuousDrain(Id)@25°C | 10V |
DriveVoltage(MaxRdsOn | 100mOhm @ 10A, 10V |
MinRdsOn) | 4V @ 250µA |
RdsOn(Max)@Id | ±20V |
Vgs | - |
Vgs(th)(Max)@Id | 68W (Tc) |
Vgs(Max) | -55°C ~ 175°C (TJ) |
InputCapacitance(Ciss)(Max)@Vds | Through Hole |
FETFeature | TO-220AB |
PowerDissipation(Max) | TO-220-3 |
OperatingTemperature | 55 V |
MountingType | 35 nC @ 10 V |
SupplierDevicePackage | 620 pF @ 25 V |
Package/Case | Automotive |
GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
Grade | |
Qualification |