
Availability:
14052
pieces
Specifications
Package | Bulk |
---|---|
Series | HEXFET® |
ProductStatus | Active |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
DraintoSourceVoltage(Vdss) | 55 V |
Current-ContinuousDrain(Id)@25°C | 1.5A (Ta) |
DriveVoltage(MaxRdsOn | 10V |
MinRdsOn) | 160mOhm @ 1.9A, 10V |
RdsOn(Max)@Id | 4V @ 250µA |
Vgs | 11 nC @ 10 V |
Vgs(th)(Max)@Id | ±20V |
Vgs(Max) | 190 pF @ 25 V |
InputCapacitance(Ciss)(Max)@Vds | - |
FETFeature | 1W (Ta) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
OperatingTemperature | Surface Mount |
MountingType | SOT-223 |
SupplierDevicePackage | TO-261-4, TO-261AA |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
Qualification |