
Availability:
14895
pieces
Specifications
Package | Bulk |
---|---|
Series | HEXFET® |
ProductStatus | Active |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
DraintoSourceVoltage(Vdss) | 40 V |
Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
DriveVoltage(MaxRdsOn | 10V |
MinRdsOn) | 2.3mOhm @ 100A, 10V |
RdsOn(Max)@Id | 3.9V @ 100µA |
Vgs | 161 nC @ 10 V |
Vgs(th)(Max)@Id | ±20V |
Vgs(Max) | 5193 pF @ 25 V |
InputCapacitance(Ciss)(Max)@Vds | - |
FETFeature | 163W (Tc) |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
OperatingTemperature | Surface Mount |
MountingType | PG-TO263-3 |
SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
Qualification |