
In Stock:
13433
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 1.9552 | |
10 | 1.9161 | |
100 | 1.8574 | |
1000 | 1.7988 | |
10000 | 1.7206 |
Specifications
Package | Bulk |
---|---|
Series | HEXFET® |
ProductStatus | Active |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
DraintoSourceVoltage(Vdss) | 60 V |
Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
DriveVoltage(MaxRdsOn | - |
MinRdsOn) | 3mOhm @ 75A, 10V |
RdsOn(Max)@Id | 4V @ 150µA |
Vgs | 170 nC @ 10 V |
Vgs(th)(Max)@Id | - |
Vgs(Max) | 6540 pF @ 50 V |
InputCapacitance(Ciss)(Max)@Vds | - |
FETFeature | 300W (Tc) |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
OperatingTemperature | Through Hole |
MountingType | TO-262 |
SupplierDevicePackage | TO-262-3 Long Leads, I2PAK, TO-262AA |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
Qualification |