Availability:
11627
pieces
Specifications
| Package | Bulk |
|---|---|
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 300 V |
| Current-ContinuousDrain(Id)@25°C | 19A (Tc) |
| DriveVoltage(MaxRdsOn | 10V |
| MinRdsOn) | 185mOhm @ 11A, 10V |
| RdsOn(Max)@Id | 5V @ 150µA |
| Vgs | 57 nC @ 10 V |
| Vgs(th)(Max)@Id | ±20V |
| Vgs(Max) | 2340 pF @ 25 V |
| InputCapacitance(Ciss)(Max)@Vds | - |
| FETFeature | 210W (Tc) |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
| OperatingTemperature | Through Hole |
| MountingType | PG-TO262-3-901 |
| SupplierDevicePackage | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Package/Case | Automotive |
| GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
| Grade | |
| Qualification |
