In Stock:
13934
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.6833 | |
| 10 | 1.6496 | |
| 100 | 1.5991 | |
| 1000 | 1.5486 | |
| 10000 | 1.4813 |
Specifications
| Package | Bulk |
|---|---|
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 195A (Tc) |
| DriveVoltage(MaxRdsOn | - |
| MinRdsOn) | 1.6mOhm @ 100A, 10V |
| RdsOn(Max)@Id | 3.9V @ 250µA |
| Vgs | 324 nC @ 10 V |
| Vgs(th)(Max)@Id | - |
| Vgs(Max) | 10820 pF @ 25 V |
| InputCapacitance(Ciss)(Max)@Vds | - |
| FETFeature | 294W (Tc) |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
| OperatingTemperature | Through Hole |
| MountingType | TO-262 |
| SupplierDevicePackage | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| Qualification |
