
In Stock:
11453
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Specifications
Package | Bulk |
---|---|
Series | HEXFET® |
ProductStatus | Active |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
DraintoSourceVoltage(Vdss) | 30 V |
Current-ContinuousDrain(Id)@25°C | 75A (Tc) |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
MinRdsOn) | 7mOhm @ 60A, 10V |
RdsOn(Max)@Id | 1V @ 250µA |
Vgs | 60 nC @ 4.5 V |
Vgs(th)(Max)@Id | ±16V |
Vgs(Max) | 3290 pF @ 25 V |
InputCapacitance(Ciss)(Max)@Vds | - |
FETFeature | 180W (Tc) |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
OperatingTemperature | Through Hole |
MountingType | TO-220AB |
SupplierDevicePackage | TO-220-3 |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
Qualification |