
Availability:
32301
pieces
Specifications
Package | Bulk |
---|---|
Series | HEXFET® |
ProductStatus | Active |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
DraintoSourceVoltage(Vdss) | 30 V |
Current-ContinuousDrain(Id)@25°C | 210A (Tc) |
DriveVoltage(MaxRdsOn | 7V, 10V |
MinRdsOn) | 2.8mOhm @ 76A, 10V |
RdsOn(Max)@Id | 4V @ 250µA |
Vgs | 209 nC @ 10 V |
Vgs(th)(Max)@Id | ±20V |
Vgs(Max) | 8250 pF @ 25 V |
InputCapacitance(Ciss)(Max)@Vds | - |
FETFeature | 3.8W (Ta), 230W (Tc) |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
OperatingTemperature | Through Hole |
MountingType | TO-220AB |
SupplierDevicePackage | TO-220-3 |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
Qualification |