IRF6622
IRF6622
Power Field-Effect Transistor, 15A I(D), 25V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
In Stock:
11741
Pricing
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|---|---|---|
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| 10 | Get latest price! | - |
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Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Fall Time | 5.6 ns |
| Rise Time | 87 ns |
| Number of Pins | 6 |
| Turn-On Delay Time | 13 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14 ns |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 15 A |
