IRF6641TRPBF
RoHS

IRF6641TRPBF

IRF6641TRPBF

International Rectifier

IRF6641 - 12V-300V N-CHANNEL POW

Download Datasheet

IRF6641TRPBF

Availability: 17421 pieces
Request Quotation
Specifications
PackageBulk
SeriesHEXFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C4.6A (Ta), 26A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)59.9mOhm @ 5.5A, 10V
RdsOn(Max)@Id4.9V @ 150µA
Vgs48 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2290 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.8W (Ta), 89W (Tc)
PowerDissipation(Max)-40°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeDIRECTFET™ MZ
SupplierDevicePackageDirectFET™ Isometric MZ
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification