IRF6691
IRF6691
Power Field-Effect Transistor, 32A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC, 2 PIN
In Stock:
12996
Pricing
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|---|---|---|
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Specifications
| RoHS | Non-Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 5.05 mm |
| Height | 600 µm |
| Length | 5.45 mm |
| Fall Time | 10 ns |
| Lead Free | Contains Lead |
| Packaging | Cut Tape |
| Rise Time | 95 ns |
| Rds On Max | 1.8 mΩ |
| Current Rating | 32 A |
| Number of Pins | 7 |
| Input Capacitance | 6.58 nF |
| Power Dissipation | 2.8 W |
| Turn-On Delay Time | 23 ns |
| Turn-Off Delay Time | 25 ns |
| Voltage Rating (DC) | 20 V |
| Max Power Dissipation | 2.8 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Drain to Source Resistance | 2.5 Ω |
| Gate to Source Voltage (Vgs) | 12 V |
| Continuous Drain Current (ID) | 32 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drain to Source Breakdown Voltage | 20 V |
