

IRF7822
IRF7822
Power Field-Effect Transistor, 18A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
In Stock:
19263
Pricing
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Specifications
RoHS | Compliant |
---|---|
Lead Free | Contains Lead |
Packaging | Bulk |
Rise Time | 5.5 ns |
Case/Package | SOIC |
Current Rating | 18 A |
Number of Pins | 8 |
Forward Voltage | 1 V |
Power Dissipation | 3.1 W |
Voltage Rating (DC) | 30 V |
Drain to Source Resistance | 5 mΩ |
Continuous Drain Current (ID) | 18 A |
Drain to Source Voltage (Vdss) | 30 V |
Drain to Source Breakdown Voltage | 30 V |