IRFH4210DTRPBF
RoHS

IRFH4210DTRPBF

IRFH4210DTRPBF

International Rectifier

HEXFET POWER MOSFET

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IRFH4210DTRPBF

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Specifications
PackageBulk
SeriesHEXFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C44A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)1.1mOhm @ 50A, 10V
RdsOn(Max)@Id2.1V @ 100µA
Vgs77 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4812 pF @ 13 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.5W (Ta), 125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePQFN (5x6)
SupplierDevicePackage8-PowerTDFN
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification