IRFP048NPBF
RoHS

IRFP048NPBF

IRFP048NPBF

International Rectifier

HEXFET POWER MOSFET

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IRFP048NPBF

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Specifications
PackageBulk
SeriesHEXFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)55 V
Current-ContinuousDrain(Id)@25°C64A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)16mOhm @ 37A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs89 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1900 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature140W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AC
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification