
Availability:
10181
pieces
Specifications
Package | Bulk |
---|---|
Series | HEXFET®, StrongIRFET™ |
ProductStatus | Active |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
DraintoSourceVoltage(Vdss) | 60 V |
Current-ContinuousDrain(Id)@25°C | 173A (Tc) |
DriveVoltage(MaxRdsOn | 6V, 10V |
MinRdsOn) | 3.3mOhm @ 100A, 10V |
RdsOn(Max)@Id | 3.7V @ 150µA |
Vgs | 210 nC @ 10 V |
Vgs(th)(Max)@Id | ±20V |
Vgs(Max) | 7020 pF @ 25 V |
InputCapacitance(Ciss)(Max)@Vds | - |
FETFeature | 230W (Tc) |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
OperatingTemperature | Through Hole |
MountingType | TO-262 |
SupplierDevicePackage | TO-262-3 Long Leads, I2PAK, TO-262AA |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
Qualification |