2N6661
RoHS

2N6661

2N6661

Vishay Siliconix

MOSFET N-CH 90V 860MA TO39

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2N6661

Spot quantity: 22170
Pricing
QTY UNIT PRICE EXT PRICE
1 15.105
10 14.8029
100 14.3498
1000 13.8966
10000 13.2924
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Specifications
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)90 V
Current-ContinuousDrain(Id)@25°C860mA (Tc)
DriveVoltage(MaxRdsOn5V, 10V
MinRdsOn)4Ohm @ 1A, 10V
RdsOn(Max)@Id2V @ 1mA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)50 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature725mW (Ta), 6.25W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-39
SupplierDevicePackageTO-205AD, TO-39-3 Metal Can
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification