SI1413EDH-T1-GE3
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SI1413EDH-T1-GE3

SI1413EDH-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 2.3A SC70-6

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SI1413EDH-T1-GE3

Spot quantity: 14761
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Specifications
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C2.3A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)115mOhm @ 2.9A, 4.5V
RdsOn(Max)@Id450mV @ 100µA (Min)
Vgs8 nC @ 4.5 V
Vgs(th)(Max)@Id±12V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSC-70-6
SupplierDevicePackage6-TSSOP, SC-88, SOT-363
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification