SI3410DV-T1-E3
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SI3410DV-T1-E3

SI3410DV-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 8A 6TSOP

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SI3410DV-T1-E3

Availability: 13744 pieces
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Specifications
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C8A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)19.5mOhm @ 5A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs33 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1295 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2W (Ta), 4.1W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification