SI3475DV-T1-GE3
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SI3475DV-T1-GE3

SI3475DV-T1-GE3

Vishay Siliconix

MOSFET P-CH 200V 0.95A 6-TSOP

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SI3475DV-T1-GE3

Availability: 10733 pieces
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Specifications
PackageCut Tape (CT),Digi-Reel®
Series-
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C950mA (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)1.61Ohm @ 900mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs18 nC @ 10 V
Vgs(th)(Max)@Id-
Vgs(Max)500 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification