SI3585DV-T1-GE3
RoHS

SI3585DV-T1-GE3

SI3585DV-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 2A/1.5A 6TSOP

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SI3585DV-T1-GE3

Availability: 13404 pieces
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Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C2A, 1.5A
RdsOn(Max)@Id125mOhm @ 2.4A, 4.5V
Vgs600mV @ 250µA (Min)
Vgs(th)(Max)@Id3.2nC @ 4.5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds830mW
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-6 Thin, TSOT-23-6
Package/Case6-TSOP
SupplierDevicePackage-
Grade-
Qualification