SI3851DV-T1-E3
RoHS

SI3851DV-T1-E3

SI3851DV-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 1.6A 6TSOP

SI3851DV-T1-E3

Availability: 10490 pieces
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Specifications
PackageTape & Reel (TR)
SeriesLITTLE FOOT®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C1.6A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)200mOhm @ 1.8A, 10V
RdsOn(Max)@Id1V @ 250µA (Min)
Vgs3.6 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@VdsSchottky Diode (Isolated)
FETFeature830mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification