SI3867DV-T1-GE3
RoHS

SI3867DV-T1-GE3

SI3867DV-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 3.9A 6TSOP

SI3867DV-T1-GE3

Spot quantity: 14999
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Specifications
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C3.9A (Ta)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)51mOhm @ 5.1A, 4.5V
RdsOn(Max)@Id1.4V @ 250µA
Vgs11 nC @ 4.5 V
Vgs(th)(Max)@Id±12V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification