SI4110DY-T1-GE3
RoHS

SI4110DY-T1-GE3

SI4110DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 80V 17.3A 8SO

SI4110DY-T1-GE3

Availability: 13407 pieces
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Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C17.3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)13mOhm @ 11.7A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs53 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2205 pF @ 40 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.6W (Ta), 7.8W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification