SI4778DY-T1-GE3
RoHS

SI4778DY-T1-GE3

SI4778DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 8A 8SO

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SI4778DY-T1-GE3

Availability: 18285 pieces
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Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C8A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)23mOhm @ 7A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs18 nC @ 10 V
Vgs(th)(Max)@Id±16V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.4W (Ta), 5W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-SOIC
MountingType8-SOIC (0.154, 3.90mm Width)
SupplierDevicePackage680 pF @ 13 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification