SI4816DY-T1-E3
RoHS

SI4816DY-T1-E3

SI4816DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC

SI4816DY-T1-E3

Availability: 17453 pieces
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Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesLITTLE FOOT®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Half Bridge)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)30V
Current-ContinuousDrain(Id)@25°C5.3A, 7.7A
RdsOn(Max)@Id22mOhm @ 6.3A, 10V
Vgs2V @ 250µA
Vgs(th)(Max)@Id12nC @ 5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds1W, 1.25W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC (0.154, 3.90mm Width)
Package/Case8-SOIC
SupplierDevicePackage
Grade
Qualification