SI4910DY-T1-E3
RoHS

SI4910DY-T1-E3

SI4910DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 40V 7.6A 8SOIC

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SI4910DY-T1-E3

Availability: 14150 pieces
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Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeature-
DraintoSourceVoltage(Vdss)40V
Current-ContinuousDrain(Id)@25°C7.6A
RdsOn(Max)@Id27mOhm @ 6A, 10V
Vgs2V @ 250µA
Vgs(th)(Max)@Id32nC @ 10V
GateCharge(Qg)(Max)@Vgs855pF @ 20V
InputCapacitance(Ciss)(Max)@Vds3.1W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC (0.154, 3.90mm Width)
Package/Case8-SOIC
SupplierDevicePackage
Grade
Qualification