SI5435BDC-T1-E3
RoHS

SI5435BDC-T1-E3

SI5435BDC-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 4.3A 1206-8

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SI5435BDC-T1-E3

Availability: 19507 pieces
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Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C4.3A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)45mOhm @ 4.3A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs24 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.3W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature1206-8 ChipFET™
MountingType8-SMD, Flat Lead
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification