SI5447DC-T1-GE3
RoHS

SI5447DC-T1-GE3

SI5447DC-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 3.5A 1206-8

SI5447DC-T1-GE3

Availability: 11139 pieces
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Specifications
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C3.5A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)76mOhm @ 3.5A, 4.5V
RdsOn(Max)@Id450mV @ 250µA (Min)
Vgs10 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.3W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType1206-8 ChipFET™
SupplierDevicePackage8-SMD, Flat Lead
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification