SI5475BDC-T1-E3
RoHS

SI5475BDC-T1-E3

SI5475BDC-T1-E3

Vishay Siliconix

MOSFET P-CH 12V 6A 1206-8

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SI5475BDC-T1-E3

Availability: 17747 pieces
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Specifications
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C6A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)28mOhm @ 5.6A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs40 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.5W (Ta), 6.3W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature1206-8 ChipFET™
MountingType8-SMD, Flat Lead
SupplierDevicePackage1400 pF @ 6 V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification