SI5515DC-T1-E3
RoHS

SI5515DC-T1-E3

SI5515DC-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 4.4A/3A 1206-8

SI5515DC-T1-E3

Availability: 19761 pieces
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Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C4.4A, 3A
RdsOn(Max)@Id40mOhm @ 4.4A, 4.5V
Vgs1V @ 250µA
Vgs(th)(Max)@Id7.5nC @ 4.5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds1.1W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SMD, Flat Lead
Package/Case1206-8 ChipFET™
SupplierDevicePackage
Grade
Qualification