SI5933CDC-T1-GE3
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SI5933CDC-T1-GE3

SI5933CDC-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 3.7A 1206-8

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SI5933CDC-T1-GE3

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Specifications
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel (Dual)
FETFeature-
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C3.7A
RdsOn(Max)@Id144mOhm @ 2.5A, 4.5V
Vgs1V @ 250µA
Vgs(th)(Max)@Id6.8nC @ 5V
GateCharge(Qg)(Max)@Vgs276pF @ 10V
InputCapacitance(Ciss)(Max)@Vds2.8W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SMD, Flat Lead
Package/Case1206-8 ChipFET™
SupplierDevicePackage-
Grade-
Qualification