SI6463BDQ-T1-E3
RoHS

SI6463BDQ-T1-E3

SI6463BDQ-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 6.2A 8-TSSOP

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SI6463BDQ-T1-E3

Availability: 16630 pieces
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Specifications
PackageCut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C6.2A (Ta)
DriveVoltage(MaxRdsOn-
MinRdsOn)15mOhm @ 7.4A, 4.5V
RdsOn(Max)@Id800mV @ 250µA
Vgs60 nC @ 5 V
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)Surface Mount
OperatingTemperature8-TSSOP
MountingType8-TSSOP (0.173, 4.40mm Width)
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification