SI7784DP-T1-GE3
RoHS

SI7784DP-T1-GE3

SI7784DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 35A PPAK SO-8

SI7784DP-T1-GE3

Availability: 14039 pieces
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Specifications
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)6mOhm @ 20A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs45 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1600 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5W (Ta), 27.7W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification