SI9926BDY-T1-E3
RoHS

SI9926BDY-T1-E3

SI9926BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 6.2A 8SOIC

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SI9926BDY-T1-E3

Availability: 22510 pieces
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Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C6.2A
RdsOn(Max)@Id20mOhm @ 8.2A, 4.5V
Vgs1.5V @ 250µA
Vgs(th)(Max)@Id20nC @ 4.5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds1.14W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC (0.154, 3.90mm Width)
Package/Case8-SOIC
SupplierDevicePackage
Grade
Qualification