SIA917DJ-T1-GE3
RoHS

SIA917DJ-T1-GE3

SIA917DJ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

SIA917DJ-T1-GE3

Spot quantity: 12258
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Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C4.5A
RdsOn(Max)@Id110mOhm @ 2.5A, 4.5V
Vgs1.5V @ 250µA
Vgs(th)(Max)@Id9nC @ 10V
GateCharge(Qg)(Max)@Vgs250pF @ 10V
InputCapacitance(Ciss)(Max)@Vds6.5W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6 Dual
Package/CasePowerPAK® SC-70-6 Dual
SupplierDevicePackage-
Grade-
Qualification