SQ2364EES-T1_GE3
RoHS

SQ2364EES-T1_GE3

SQ2364EES-T1_GE3

Vishay Siliconix

MOSFET N-CH 60V 2A SOT23-3

Download Datasheet

SQ2364EES-T1_GE3

Availability: 10798 pieces
Request Quotation
Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C2A (Tc)
DriveVoltage(MaxRdsOn1.5V, 4.5V
MinRdsOn)240mOhm @ 2A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs2.5 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)330 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification