SQJ431AEP-T1_GE3
RoHS

SQJ431AEP-T1_GE3

SQJ431AEP-T1_GE3

Vishay Siliconix

MOSFET P-CH 200V 9.4A PPAK SO-8

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SQJ431AEP-T1_GE3

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Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C9.4A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)305mOhm @ 3.8A, 10V
RdsOn(Max)@Id3.5V @ 250µA
Vgs85 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3700 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature68W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification