Si2319DDS-T1-GE3
Si2319DDS-T1-GE3
MOSFET P-CH 40V 2.7A/3.6A SOT23
Availability:
10070
pieces
Specifications
| Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
|---|---|
| Series | TrenchFET® Gen III |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 2.7A (Ta), 3.6A (Tc) |
| DriveVoltage(MaxRdsOn | 75mOhm @ 2.7A, 10V |
| MinRdsOn) | 2.5V @ 250µA |
| RdsOn(Max)@Id | 19 nC @ 10 V |
| Vgs | ±20V |
| Vgs(th)(Max)@Id | 650 pF @ 20 V |
| Vgs(Max) | - |
| InputCapacitance(Ciss)(Max)@Vds | 1W (Ta), 1.7W (Tc) |
| FETFeature | -55°C ~ 150°C (TJ) |
| PowerDissipation(Max) | Surface Mount |
| OperatingTemperature | SOT-23-3 (TO-236) |
| MountingType | TO-236-3, SC-59, SOT-23-3 |
| SupplierDevicePackage | 4.5V, 10V |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| Qualification |
