SiSH402DN-T1-GE3
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SiSH402DN-T1-GE3

SiSH402DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 19A/35A PPAK

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SiSH402DN-T1-GE3

Availability: 10949 pieces
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Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C19A (Ta), 35A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)6mOhm @ 19A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs42 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1700 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.8W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8SH
SupplierDevicePackagePowerPAK® 1212-8SH
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification